Design of a Reconfigurable Low-noise Amplifier in a Silicon-germanium Process for Radar Applications
نویسنده
چکیده
ACKNOWLEDGEMENTS I would like to thank Dr. Cressler for his guidance, support, and insight which contributed greatly to this work. He is an outstanding teacher and advisor, and he is always willing to make time to help work through problems. I would like to express my gratitude to the Air Force Research Laboratory for their support and feedback on my research. I would like to also acknowledge Tower Jazz for their help in the fabrication process. I am also thankful for the support of my thesis committee members Dr. John Papapolymerou and Dr. Gregory Durgin. In addition, I would like to thank the SiGe Circuits and Devices Group for all their hard work and for making our research group a productive, but fun team atmosphere. Finally, I would like to thank my friends and family for their unwavering support in my education.
منابع مشابه
Silicon Germanium (SiGe) Technology Enhances Radio Front-End Performance - Application Note - Maxim
This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is shown to provide lower noise performance. The impact of SiGe on linearity is explored. Three parameters are increasingly important for cellular handsets and other digital, portable, wireless communication...
متن کاملSilicon Germanium (SiGe) Technology Enhances Radio Front-End Performance - AN697
This application note describes how silicon germanium enhances IC performance in RF applications. A Giacoleto model is used to analyze noise effects. Wider gain bandwidth of SiGe technology is shown to provide lower noise performance. The impact of SiGe on linearity is explored. Three parameters are increasingly important for cellular handsets and other digital, portable, wireless communication...
متن کاملDesign of an S-band Ultra-low-noise Amplifier with Frequency Band Switching Capability
In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...
متن کاملHigh-Frequency Low-Noise Amplifiers and Low-Jitter Oscillators in SiGe:C BiCMOS Technology
This paper describes the design of noise-critical circuits for radio-frequency and high-speed digital applications in a SiGe:C BiCMOS technology. Starting with a figure of merit for the high-frequency noise behavior of bipolar transistors, challenges in the transistor design are formulated. It is shown that the addition of carbon to the base of a SiGe-HBT results in an excellent high-frequency ...
متن کاملA Sub-µW Tuneable Switched-Capacitor Amplifier-Filter for Neural Recording Using a Class-C Inverter
A two stage sub-µW Inverter-based switched-capacitor amplifier-filter is presented which is capable of amplifying both spikes and local field potentials (LFP) signals. Here we employ a switched capacitor technique for frequency tuning and reducing of 1/f noise of two stages. The reduction of power consumption is very necessary for neural recording devices however, in switched capacitor (SC) cir...
متن کامل